Low Loss Superconducting Titanium Nitride Coplanar Waveguide Resonators

By Michael R. Vissers, Jiansong Gao, D. Wisbey, D. A. Hite, C. Tsuei, A. C'orcoles, Matthias Steffen, David P. Pappas. 2010

185 citations recorded by the source corpus.

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into rf coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e., high and low electric field regimes, respectively. At high field, we found the highest internal quality factors (∼107) were measured for TiN with predominantly a (200)-TiN orientation. The (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, ≈2 nm, layer of SiN during the predeposition procedure. On these surfaces we found a significant increase of Qi for both high and low electric field regimes.

Subfields: Astronomy and Astrophysics, Biomedical Engineering, Condensed Matter Physics

View Paper: https://www.semanticscholar.org/paper/8ba292890510fde7e014dd501b8f58d12475e9de

Citations in the corpus

• Circuit quantum electrodynamics (2020, unknown): “Internal quality factors over 106 can be achieved by careful fabrication minimizing the occurrence of TLSs and by etching techniques to avoid substrate-vacuum interfaces in regions of high electric fields (Bruno et al., 2015; Calusine et al., 2018; Megrant et al., 2012; Vissers et al., 2010).”