Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

By T. Nanjo, M. Takeuchi, M. Suita, T. Oishi, Y. Abe, Y. Tokuda, Y. Aoyagi. 2008

140 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/8b32e4986073be5402ecf834e32ad9150f067973