High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

By H. Ng, T. Moustakas, S. Chu. 2000

162 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8b23ec2f989d91c0088afc27068f7e96a47aec8e

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In Condensed Matter Physics

1. A. I. Zhmakin

In Electronic, Optical and Magnetic Materials

1. A. I. Zhmakin

In Materials Chemistry

1. A. I. Zhmakin

Citations in the corpus

• Enhancement of light extraction from light emitting diodes (2011, background): “In case of GaN-based LEDs, however, growth of DBR layers with high content of Al is difficult [145,547].”