Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers.
By D. Grundler. Physical Review Letters, 2000
623 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/8a7a628d8593a88cb379567770bbb126a9ca95bd
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Artificial gauge fields in materials and engineered systems (2017, neutral): “where the weights α and β can be independently measured [322,323] and their ratio can be tuned using additional gate control over the electron confinement [321,324] and density [325,326].”
- Spintronics: Fundamentals and applications (2004, neutral): “48As quantum wells (Nitta et al., 1997; Hu et al., 1999; Grundler, 2000) (for GaAs/ AlGaAs 2DEG, see also Miller et al.”
- Measurement of Rashba and Dresselhaus spin-orbit magnetic fields (2007, methodology): “Tuning of the Rashba coupling has been achieved by introducing additional electric fields from gates [9, 19] or by changing the electron density [20, 21].”
- Spin dynamics in semiconductors (2010, background): “6The channel width dependence [167], density dependence [15 9–162, 165, 166, 169–173], gate-voltage dependence [158, 1 59, 163, 164, 173, 178], temperature dependence [177] and interface e ffect [162, 165, 172, 174, 184] were investigated in various ma terials from InAs, InGaAs and GaAs to GaSb.”