Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

By Yuan Liu, Jian Guo, Enbo Zhu, L. Liao, Sung-Joon Lee, Mengning Ding, I. Shakir, V. Gambin, Yu Huang, Xiangfeng Duan. Nature, 2018

1,846 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8a44a59ec87b903449b43d63775a9f6e4da604c0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Hyunho Kim
2. Husam N. Alshareef
3. Zhenwei Wang

In Materials Chemistry

1. Hyunho Kim
2. Zhenwei Wang
3. Husam N. Alshareef

Citations in the corpus

• MXetronics: Electronic and photonic applications of MXenes (2019, background): “Recently, it has been demonstrated that transferred metal electrodes can realize van der Waals metalsemiconductor junctions following the Mott-Schottky rule.[71] In their work, the MoS2 transistors with various transferred metal electrodes have shown completely different”