The quasi-free-standing nature of graphene on H-saturated SiC(0001)
By F. Speck, J. Jobst, F. Fromm, M. Ostler, D. Waldmann, M. Hundhausen, H. B. Weber, T. Seyller. 2011
238 citations recorded by the source corpus.
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy, we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0 − 6.5 × 1012 cm−2) with a carrier mobility of 3100 cm2/Vs at room temperature. Compared to graphene on the buffer layer, a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001) which justifies the term “quasi-free-standing.”
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/8a2f02efead232a0ff5e77ecca9ad4311167b351
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In Materials Chemistry
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Citations in the corpus
- Water on graphene: review of recent progress (2018, methodology): “The results of this transformation are the change of the intrinsic doping from electrons to holes, due to the spontaneous polarisation of the SiC substrate [91], [92], and the significant enhancement of the carrier mobility [104], [117], [119].”
- Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, background): “1e) demonstrate the presence of QFMLG throughout the sample (2D peak centered at 2663 cm -1 , with a FWHM ≈ 30 cm -1 ) [22], except for regions close”
- Production and processing of graphene and related materials (2020, background): “The charge carrier type is changed from electrons in SLG/BLG on the buffer layer to holes in QFSLG/QFBLG on the H-terminated (0001) surface of hexagonal SiC polytypes [598, 599, 611, 659, 662, 663].”