Minority carrier lifetime degradation in boron-doped Czochralski silicon

By Stefan W. Glunz, S. Rein, J. Y. Lee, Wilhelm Warta. 2001

320 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/884201e01783323624bc88cff2adebf70b971cbc

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Citations in the corpus

• Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline silicon (2008, background): “Optimized temperature ramps within the manufacturing process can limit the negative impact of defect formation but cannot avoid it completely.(7,11,12) The observable degradation consists of two parallel reactions,(10) one known as the fast process which occurs in the first few minutes and the other”