Role of oxygen functional groups in graphene oxide for reversible room-temperature NO2 sensing

By Y. Choi, Y. Yoon, Kyoung Soon Choi, J. Kang, Young-Seok Shim, Y. Kim, H. Chang, J. -. Lee, C. Park, Soo Young Kim and 1 more. 2015

199 citations recorded by the source corpus.

Abstract Reduced graphene oxide (rGO) is one of the promising sensing elements for high-performance chemoresistive sensors because of its remarkable advantages such as high surface-to-volume ratio, outstanding transparency, and flexibility. In addition, the defects on the surface of rGO, including oxygen functional groups, can act as active sites for interaction with gaseous molecules. However, the major drawback of rGO-based sensors is the extremely sluggish and irreversible recovery to the initial state after a sensing event, which makes them incapable of producing repeatable and reliable sensing signals. Here, we show that pristine GO can be used as the active sensing material with reversible and high response to NO 2 at room temperature. First-principles calculations, in conjunction with experimental results, reveal the critical role of hydroxyl groups rather than epoxy groups in changing metallic graphene to the semiconducting GO. We show that the adaptive motions of the hydroxyl groups, that is, the rotation of these groups for the adsorption of NO 2 molecules and relaxation to the original states during the desorption of NO 2 molecules, are responsible for the fast and reversible NO 2 sensing behavior of GO. Our work paves the way for realizing high-response, reversible graphene-based room-temperature chemoresistive sensors for further functional convergence.

Subfields: Bioengineering, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/87e14a8b2cb24b9b8ee33110b6f50cb2550e6c5b

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In Bioengineering

  1. Il‐Doo Kim
  2. Maurizio Donarelli
  3. Luca Ottaviano

In Biomedical Engineering

  1. Il‐Doo Kim
  2. Maurizio Donarelli
  3. Luca Ottaviano
  4. Seon-Jin Choi

In Electrical and Electronic Engineering

  1. Maurizio Donarelli
  2. Il‐Doo Kim
  3. Luca Ottaviano
  4. Seon-Jin Choi

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