Field effect transistors with SrTiO3 gate dielectric on Si

By K. Eisenbeiser, J. Finder, Z. Yu, J. Ramdani, J. Curless, J. Hallmark, R. Droopad, W. Ooms, L. Salem, S. Bradshaw and 1 more. 2000

282 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/07ac4b754e8b8e6ca3c7f0e391dfdcc093ca70fc

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. John Robertson

In Materials Chemistry

1. S. Streiffer
2. J. Scott
3. John Robertson
4. N. Spaldin
5. K. Rabe
6. M. Dawber

Citations in the corpus

• Alternative dielectrics to silicon dioxide for memory and logic devices (2000, background): “Epitaxial single-crystal dielectrics have also been considere”
• Critical thickness for ferroelectricity in perovskite ultrathin films (2003, background): “substrates has opened the door to the use of alternative materials in metal-oxide-semiconductor field-effect transistors (MOSFETs”