Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure
By V. Motsnyi, J. Boeck, J. Das, W. Roy, G. Borghs, E. Goovaerts, V. Safarov. 2001
277 citations recorded by the source corpus.
We demonstrate experimentally the electrical electron spin injection from a ferromagnetic metal/tunnel barrier contact into a III–V semiconductor light emitting diode (LED). The injected electrons have in-plane spin orientation. By applying a relatively small oblique external magnetic field this spin orientation within the semiconductor can be manipulated to have a nonzero out-of-plane component. By measuring the resulting circular polarization of the emitted light, we observe injected spin polarization in excess of 9% at 80 K in a CoFe/AlOx/(Al,Ga)As/GaAs surface-emitting spin-LED.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/86f56e9d5139f534718a179905531674d500afd8
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In Atomic and Molecular Physics, and Optics
In Condensed Matter Physics
Citations in the corpus
- Spin-polarized light-emitting diodes and lasers (2007, methodology): “In the OHE geometry, the degree of circular polarization CP is related to the degree of injected spin polarization inj through the equation [63] CP = I (σ +) − I (σ−) I (σ +) + I (σ−) = inj · cos(θ) 4 · TS τ · ( · TS) 2 1 + ( · TS)2 + inj · sin(θ) 4 · TS τ · 1 + ( · TS) 2/2 1 + ( · TS)2 .”
- Spin-polarised currents and magnetic domain walls (2005, background): “Several groups have recently demonstrated spin injection from metals[79, 80, 81], ferromagnetic semiconductors [82, 83, 84] and tunnel and hot electron injectors [85, 86, 87] into a semiconductor by using a so-called spin-LED as a detector.”