Diameter-controlled synthesis of single-crystal silicon nanowires

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Array-based architecture for FET-based, nanoscale electronics (2003, background): “At the same time, we are developing technologies to grow silicon and germanium NWs [3], [4], which are also only nanometers in width (e.g., wires as small as 3 nm in diameter have been reported) and can be grown or assembled into sets of long parallel wires [5].”
Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, methodology): “Nanowires have been grown using several different kinds of techniques including chemical vapor deposition (CVD) [9, 10], laser ablation [11], supercritical fluid solution phase [12], metalorganic chemical vapor deposition (MOCVD) [13–15], chemical beam epitaxy (CBE) [16, 17] and molecular beam epita”
Growth of nanowire superlattice structures for nanoscale photonics and electronics (2002, background): “1 ) exploits recent developments in metal-catalysed nanowire synthesis, which have shown that nearly monodisperse metal nanoclusters can be used to control the diamete”
Electronic properties of silicon nanowires (2005, background): “NWs are synthesized from a range of different materials [1], such as CdS and ZnS [2], GaN [3], p-GaN [4], Si, Ge [5], [6], or InP [7], [8].”