Appearance of room-temperature ferromagnetism in Cu-doped TiO 2-δ films
By S. Duhalde, M. Vignolo, Federico Golmar, C. Chiliotte, C. E. R. Torres, L. Errico, A. Cabrera, M. Rentería, F. H. Sánchez, M. Weissmann. 2005
206 citations recorded by the source corpus.
In recent years there has been an intense search for room temperature ferromagnetism in doped dilute semiconductors, which have many potentially applications in spintronics and optoelectronics. We report here the unexpected observation of significant room temperature ferromagnetism in a semiconductor doped with nonmagnetic impurities, Cu-doped TiO$_2$ thin films grown by Pulsed Laser Deposition. The magnetic moment, calculated from the magnetization curves, resulted surprisingly large, about 1.5 $\mu_B$ per Cu atom. A large magnetic moment was also obtained from ab initio calculations using the supercell method for TiO$_2$ with Cu impurities, but only if an oxygen vacancy in the nearest-neighbour shell of Cu was present. This result suggests that the role of oxygen vacancies is crucial for the appearance of ferromagnetism. The calculations also predict that Cu doping favours the formation of oxygen vacancies.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/859bb96dca4158900ab139a07cfdde1aedc44129
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Citations in the corpus
- Shallow and deep trap emission and luminescence quenching of TiO2 nanoparticles on Cu doping (2014, background): “Duhalde et al. (2005) theoretically studied that doping increases the formation of oxygen vacancy nearby Cu2? ions.”
- Defect generation, d-d transition, and band gap reduction in Cu-doped TiO2 nanoparticles (2013, background): “The formation of oxygen vacancy nearby Cu is theoretically proved in the Cu-doped TiO2 system [25].”