Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

By Masatomo Sumiya, K. Yoshimura, Tetsu Ito, K. Ohtsuka, S. Fuke, K. Mizuno, M. Yoshimoto, H. Koinuma, A. Ohtomo, M. Kawasaki. 2000

134 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/85813bcf616e55d8a6bcba96c17f9d8ed5704356