Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties.

By Dacheng Wei, Yunqi Liu, Yu Wang, Hongliang Zhang, Liping Huang, G. Yu. Nano letters (Print), 2009

2,882 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8544cc89cbcedbf7455738c1ade4a9b62428d7f7

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In Electrical and Electronic Engineering

1. Ryan Beams
2. Lukás Novotný
3. Benjamin Harack
4. M. Hilke
5. Gaixia Zhang
6. Damilola O. Runsewe
7. F. A. Bipasha
8. C. D'Amato

In Electronic, Optical and Magnetic Materials

1. Damilola O. Runsewe
2. F. A. Bipasha
3. V. Jai̇n
4. Md. Nizam Uddin
5. C. Wong
6. Meilin Liu
7. Lukás Novotný
8. Liang Huang

In Materials Chemistry

1. Zhenhua Ni
2. Lukás Novotný
3. Ryan Beams
4. Jong-Hyun Ahn
5. R. Vajtai
6. Jianguo Tian
7. C. Wong
8. Benjamin Harack

Citations in the corpus

• Raman characterization of defects and dopants in graphene (2015, background): “In bilayer graphene (BLG) EF ∝ n, which means BLG is far less sensitive to doping than SLG at the achievable values of n.”