Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate

By K. Dolui, I. Rungger, Stefano Sanvito. 2013

236 citations recorded by the source corpus.

role, since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band-gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO2 are mainly determined by the detailed structure of the MoS2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. PACS numbers:

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/851a8a95113bececb6d686441cd9037ef26d141b