Planar-integrated single-crystalline perovskite photodetectors

By M. Saidaminov, V. Adinolfi, R. Comin, A. Abdelhady, W. Peng, I. Dursun, M. Yuan, S. Hoogland, Edward H. Sargent, Osman M. Bakr. Nature Communications, 2015

663 citations recorded by the source corpus.

Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 104 electrons per photon) and high gain-bandwidth product (above 108 Hz) relative to other perovskite-based optical sensors. Single crystals of organolead halide perovskites exhibit large carrier mobilities and long diffusion lengths. Here, the authors succeed in growing the single crystals on planar substrates and integrate them as the active layer of visible photodetectors with a large gain-bandwidth product.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/83c4893b933daaae732899347625358ada649863

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In Electrical and Electronic Engineering

1. Ardalan Armin
2. Paul Meredith
3. F. P. García de Arquer
4. Edward H. Sargent
5. K. Johnston

In Electronic, Optical and Magnetic Materials

1. Paul Meredith
2. Ardalan Armin
3. Edward H. Sargent

In Materials Chemistry

1. F. P. García de Arquer
2. Paul Meredith
3. Ardalan Armin
4. Edward H. Sargent
5. K. Johnston

Citations in the corpus

• Solution-processed semiconductors for next-generation photodetectors (2017, background): “methyl-ammonium lead bromide single crystals that, implemented in a back-to-back Schottky photodetector architecture, also resulted in G×BW beyond the 10(8) Hz threshold.(95) Ultrafast infrared photodetection with moderate quantum efficiencies has been recently reported by Gao et al.”