The Use of Functionally Graded Poly-SiGe Layers for MEMS Applications

By Ann Witvrouw, A. Mehta. 2005

384 citations recorded by the source corpus.

It is difficult to meet all the different material and economical requirements posed to a MEMS structural layer that can be integrated with the electronics on the same substrate using a single layer process. Therefore a multilayer process, which uses a combination of a CVD crystallization layer and a high-growth rate PECVD bulk layer was developed. High-quality films with excellent electrical and mechanical properties can be obtained at low temperature (#450°C) and high deposition rates (~100 nm/min). Fine-tuning of the stress gradient is accomplished by the use of a top stress compensation layer, whose optimal thickness was estimated from an evaluation of the stress gradient profile over thickness. These layers have been used for processing a 10 µm thick poly-SiGe gyroscope on top of a standard 0.35 µm CMOS process.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/82c3d3f7ee4eb68064314cebfad39625db2474c3

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In Biomedical Engineering

  1. S. R. Mahmoud
  2. Abdelouahed Tounsi
  3. E. A. Adda Bedia
  4. Mohammed Sid Ahmed Houari
  5. Hung Nguyen-Xuan
  6. Reza Ansari
  7. Thuc P. Vo
  8. Erfan Salari

In Electrical and Electronic Engineering

  1. Huu-Tai Thai
  2. Hung Nguyen-Xuan
  3. Abdelouahed Tounsi
  4. Reza Ansari
  5. Thuc P. Vo
  6. Erfan Salari
  7. Mohammad Taghi Ahmadian
  8. Farzad Ebrahimi

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