Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene
By Farhan Rana, P. George, J. Strait, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, M. Spencer. 2009
211 citations recorded by the source corpus.
Electron-hole generation and recombination rates for intravalley and intervalley phonon scattering in graphene are presented. The transverse and the longitudinal optical phonon modes E2g modes near the zone center point contribute to intravalley interband carrier scattering. At the zone edge KK point, only the transverse optical phonon mode A 1 mode contributes significantly to intervalley interband scattering with recombination rates faster than those due to zone-center phonons. The calculated recombination times range from less than a picosecond to more than hundreds of picoseconds and are strong functions of temperature and electron and hole densities. The theoretical calculations agree well with experimental measurements of the recombination rates of photoexcited carriers in graphene.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/828059a68665ecb4a5e24c0c009416b826411b78
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Citations in the corpus
- Ultrafast graphene photodetector. (2009, background): “On light absorption, the generated electron–hole pairs in graphene would normally recombine on a timescale of tens of picoseconds, depending on the quality and carrier concentration of the graphen”
- Graphene-based nanomaterials for drug delivery and tissue engineering. (2014, background): “Depending on the density of electrons and holes, electron–hole pairs generated upon light absorption on graphene surface can recombine rapidly (picoseconds), but they can be separated by applying an external or internal field formed near electron graphene interface to generate photo current [37].”
- Graphene based materials: Past, present and future (2011, background): “The absorption of light on the surface generates electron–hole pairs in graphene which would recombine very quickly (Picoseconds) depending upon the temperature as well as electrons and holes density [202].”