Coevaporation of Cu2ZnSnSe4 thin films
By A. Redinger, S. Siebentritt. 2010
134 citations recorded by the source corpus.
Cu2ZnSnSe4 thin films grown by coevaporation are investigated in a wide temperature range and for different Se partial pressures during growth. At temperatures higher than 350 °C Sn is re-evaporating as SnSe from the surface whereas Zn is lost at temperatures higher than 430 °C. Moreover the Se partial pressure dramatically changes the Zn and Sn concentrations in the resulting film. Interrupted processes at 380 °C show that single-stage coevaporation intrinsically induces a secondary phase at the substrate/film interface.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/81e9daad32e3ffb9ad8fac77ca43ea1789e10bd3
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Citations in the corpus
- Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu2ZnSnS4 absorber (2013, background): “Using vacuum process, we fabricated Cu2ZnSnS4 solar cells with 8.4% efficiency, a number independently certified by an external, accredited laboratory.”