Spin-dependent transport in magnetic nanostructures

By S. Maekawa, Jun-ichiro Inoue. 2002

208 citations recorded by the source corpus.

Abstract The charging energy of a metallic grain called a dot embedded in a nanowire causes the single electron tunneling. We propose that when two magnetic dots are embedded in a nanowire, the single electron tunneling process is controlled by an external magnetic field. This is because the tunneling of electrons between magnetic dots depends on the relative angle of the magnetic moments.

Subfields: Atomic and Molecular Physics, and Optics

View Paper: https://www.semanticscholar.org/paper/81c02030ae9e60eee90737c5d4fca1bbe8cdd7cf

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In Atomic and Molecular Physics, and Optics

1. Stuart S. P. Parkin
2. See-Hun Yang
3. C. Marrows
4. J. Slonczewski
5. Albert Fert
6. D. Ralph

Citations in the corpus

• Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers (2004, background): “, which itself is determined by the spin dependence of the density of states near the Fermi energy of each of the ferromagnetic electrodes, and the tunnelling matrix elements for these electron”
• Currents, torques, and polarization factors in magnetic tunnel junctions (2004, background): “One recently reviewed BTM-based theory of collinear MTJ magnetoresistance [11] extends naturally to tunneling between spin channels for general θ.”