Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping

By C. Coletti, C. Riedl, D. S. Lee, B. Krauss, L. Patthey, Klaus von Klitzing, Jurgen Hubert Smet, U. Starke. 2010

363 citations recorded by the source corpus.

Subfields: Materials Chemistry, Mechanical Engineering, Physical and Theoretical Chemistry

View Paper: https://www.semanticscholar.org/paper/81b32cc4c5dd7d9c76fee8d572f23ad12439bdfa

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In Materials Chemistry

1. A. Krasheninnikov
2. F. Banhart
3. J. Kotakoski
4. Feng Wang
5. D. Basov
6. Alessandra Lanzara
7. M. Fogler
8. Yuanbo Zhang

In Physical and Theoretical Chemistry

1. A. Krasheninnikov

Citations in the corpus

• Colloquium: Graphene spectroscopy (2014, background): “Somewhat weaker interactionα ≈ 0.9 is realized for graphene on the common SiO2 substrate, κ = (1 + SiO2)/2 = 2.45.”
• Graphene-based two-dimensional Janus materials (2018, background): “Non-covalent modification with small molecules Coletti et al.96 demonstrated that the band structure of epitaxial graphene (EG) on SiC (0001) can be precisely tailored by functionalizing the graphene surface with tetrafluorotetracyanoquinodimethane (F4-TCNQ) molecules in a non-covalent way96.”
• Graphene synthesis, characterization and its applications in nanophotonics, nanoelectronics, and nanosensing (2015, neutral): “In order to introduce a bandgap into graphene, several solutions were proposed: forming graphene nanoribbons (GNRs) [23], biasing bilayer graphene [25], applying strain [114], and doping of graphene [115].”
• Structural defects in graphene. (2011, background): “However, the adsorption of organic species is weak and desorption starts at temperatures below 100 °C.(116) Nevertheless, the localization of dopants in graphene could be achieved on defects where an increased reactivity prevails.”