On the use of MOS varactors in RF VCOs

By Pietro Andreani, S. Mattisson. IEEE Journal of Solid-State Circuits, 2000

433 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/81406fc5578a822ae58b84145b6a2d1498971781

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Andrea Mazzanti
2. Carlo Samori
3. Andrea Giovanni Bonfanti
4. Luca Romanò
5. Pietro Andreani

Citations in the corpus

• Class-C Harmonic CMOS VCOs, With a General Result on Phase Noise (2008, background): “Coarse tuning is achieved by switching the bias voltage of two independent double-oxide AMOS varactors [46], [47], [48] with a gate length of 0.”
• Analysis and design of a 1.8-GHz CMOS LC quadrature VCO (2002, methodology): “PMOS devices working in the accumulation and depletion regions have been used as varactors [23]–[25].”