Transition metal oxides as hole-selective contacts in silicon heterojunctions solar cells
By L. G. Gerling, S. Mahato, A. Morales-Vilches, G. Masmitjà, P. Ortega, C. Voz, R. Alcubilla, J. Puigdollers. 2016
383 citations recorded by the source corpus.
Abstract This work reports on a comparative study comprising three transition metal oxides, MoO3, WO3 and V2O5, acting as front p-type contacts for n-type crystalline silicon heterojunction solar cells. Owing to their high work functions (>5 eV) and wide energy band gaps, these oxides act as transparent hole-selective contacts with semiconductive properties that are determined by oxygen-vacancy defects (MoO3−x), as confirmed by X-ray photoelectron spectroscopy. In the fabricated hybrid structures, 15 nm thick transition metal oxide layers were deposited by vacuum thermal evaporation. Of all three devices, the V2O5/n-silicon heterojunction performed the best with a conversion efficiency of 15.7% and an open-circuit voltage of 606 mV, followed by MoO3 (13.6%) and WO3 (12.5%). These results bring into view a new silicon heterojunction solar cell concept with advantages such as the absence of toxic dopant gases and a simplified low-temperature fabrication process.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/80b6c2909e9982de1c20662f8f9988b5c06f4bbd
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells (2017, background): “This is the reason why it has been proposed [10, 15] that a dipole layer Δ is present at the TMO/n-Si interface, in order to equilibrate the Fermi levels in the energy band diagram once the heterojunction is formed.”
- Oxygen vacancies in tungsten oxide and their influence on tungsten oxide/silicon heterojunction solar cells (2016, background): “Unfortunately tungsten oxide hole contact layers deposited directly on (i)a-Si:H passivation layers [8], or n-type crystalline silicon [9] only yield comparatively low fill factors and limited open circuit voltages.”
- Industrially feasible, dopant‐free, carrier‐selective contacts for high‐efficiency silicon solar cells (2017, background): “For example, as hole selective contacts, molybdenum oxide (MoOx) [10], vanadium oxide (VOx) [11,12], and tungsten oxide (WOx) [12,13], all with high work function, and nickel oxide (NiOx) [14] and PEDOT:PSS [poly(3,4ethylene-dioxythiophene):polystyrenesulfonate] [15] with a small valence band offset”