Indium Phosphide Nanowires as Building Blocks for Nanoscale Electronic and Optoelectronic Devices.

By Xiangfeng Duan, Yu Huang, Yi Cui, Jianfang Wang, Charles M. Lieber. 2001

257 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/80a2bc09315c6ba4464e8b108ae66f540ee46277

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Peidong Yang
2. Joshua E. Goldberger
3. M. Law

In Biomedical Engineering

1. Peidong Yang
2. Joshua E. Goldberger
3. M. Law
4. Frances M. Ross
5. Xiuling Li

In Electrical and Electronic Engineering

1. M. Law
2. Peidong Yang
3. Joshua E. Goldberger
4. Xiuling Li

Citations in the corpus

• Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, unknown): “InP 〈1 1 1〉Ba/[0 0 0 1]a,b Often polytypic (ZB/WZ) with stacking faults [63] 〈1 1 0〉 [64] 〈1 0 0〉 No stacking faults [65]”
• SEMICONDUCTOR NANOWIRES AND NANOTUBES (2004, background): “Recent examples include VLS-grown Si and GaN nanowire rectifiers (166) and InP nanowire LEDs, as well as rectifying multilayer metal rods fabricated by electrodeposition (167).”