High quality Ge on Si by epitaxial necking

By T. Langdo, C. Leitz, M. Currie, E. Fitzgerald, Anthony Lochtefeld, D. Antoniadis. 2000

216 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/80165955a362d8d01ca4a1d5a87123f48e5a760d

Citations in the corpus

• Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics (2017, unknown): “9(b)) was firstly revealed in Ge/Si hetero-epitaxy [108], and then applied to III-V/ Si epitaxy.”