Large thermoelectric performance of heavily Nb-doped SrTiO3 epitaxial film at high temperature
By Shingo Ohta, T. Nomura, H. Ohta, M. Hirano, Hideo Hosono, Kunihito Koumoto. 2005
337 citations recorded by the source corpus.
Carrier concentration dependence of the thermoelectric figure of merit, ZT of SrTiO3 at high-temperature (1000 K) is clarified using heavily Nb-doped SrTiO3 epitaxial films, which were grown on insulating (100)-oriented LaAlO3 single-crystalline substrates by a pulsed-laser deposition method. Carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO3 epitaxial films were experimentally evaluated at 1000 K with an aid of theoretical analysis. ZT of Nb-doped SrTiO3 increases with Nb concentration and it reaches ∼0.37 (20% Nb doped), which is the largest value among n-type oxide semiconductors ever reported.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/800247e021d9f8d09de573c63b4d7653613061fc
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Citations in the corpus
- Assessing the Thermoelectric Properties of Sintered Compounds via High-Throughput Ab-Initio Calculations (2011, methodology): “[67] S.”