Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

By T. Kuykendall, P. Pauzauskie, Sang‐Kwon Lee, Yanfeng Zhang, Joshua E. Goldberger, Peidong Yang. 2003

356 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/7fe01539b85498f6dac7bbb1cf8d8bbc467c3dca

Citations in the corpus

• Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, unknown): “The [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] direction may in general be preferred for GaN nanowires grown with MOCVD and Ni catalyst as Kuykendall et al [76] and Qian et al [24] also reported the growth of [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] GaN nanowires on cplane sapphire s”