Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

By Susmita Ghose, Shafiqur Rahman, L. Hong, J. Rojas-Ramírez, Hanbyul Jin, Kibog Park, R. Klie, R. Droopad. 2017

147 citations recorded by the source corpus.

The growth of high quality epitaxial beta-gallium oxide (β-Ga2O3) using a compound source by molecular beam epitaxy has been demonstrated on c-plane sapphire (Al2O3) substrates. The compound source provides oxidized gallium molecules in addition to oxygen when heated from an iridium crucible in a high temperature effusion cell enabling a lower heat of formation for the growth of Ga2O3, resulting in a more efficient growth process. This source also enabled the growth of crystalline β-Ga2O3 without the need for additional oxygen. The influence of the substrate temperatures on the crystal structure and quality, chemical bonding, surface morphology, and optical properties has been systematically evaluated by x-ray diffraction, scanning transmission electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, spectroscopic ellipsometry, and UV-vis spectroscopy. Under optimized growth conditions, all films exhibited pure 2¯01  oriented β-Ga2O3 thin films with six-fold rotational symmetry when...

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/7f66041e64838d10fc8ee31f156d8f87b0520c45

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Citations in the corpus

• Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications (2020, methodology): “Highquality epitaxial β-Ga2O3 films were obtained by MBE on sapphire substrate at 700 ◦C [117].”