Impedance spectroscopy characterisation of highly efficient silicon solar cells under different light illumination intensities

By I. Mora‐Seró, G. Garcia‐Belmonte, Pablo P. Boix, M. A. Vázquez, Juan Bisquert. 2009

274 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7f1be7848a3bdf04b3b3a175ff9aa9ceb5b6eef8

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In Atomic and Molecular Physics, and Optics

1. G. Garcia‐Belmonte

In Electrical and Electronic Engineering

1. O. Almora
2. G. Garcia‐Belmonte
3. C. Voz
4. L. G. Gerling
5. J. Puigdollers
6. R. Alcubilla

Citations in the corpus

• Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells (2017, background): “Interestingly, the obtained bi V values are similar to those of standard c-Si solar cells in which 600–750 mV are distributed between the two sides of the homojunction, suggesting that TMO/n-Si heterojunction behave similarly [21, 22].”