Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
By R. Tauk, F. Teppe, S. Boubanga, D. Coquillat, Wojciech Knap, Y. Meziani, C. Gallon, F. Boeuf, Thomas Skotnicki, C. Fenouillet-Béranger and 3 more. 2006
353 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/7e46637b7e00f62550202addaa24b3192cb488a8
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- CMOS Integrated Antenna-Coupled Field-Effect Transistors for the Detection of Radiation From 0.2 to 4.3 THz (2012, methodology): “Such devices, without antenna or grating couplers, were first investigated in 2006 by the Knap group of Montpellier with radiation at 700 GHz [12].”
- THz Active Imaging Systems With Real-Time Capabilities (2011, background): “They had performed similar studies with III/V-based transistors before, but the investigation of theMOSFETs was the first where the responsivity and the NEP were determined tentatively [66].”
- A 1 k-Pixel Video Camera for 0.7–1.1 Terahertz Imaging Applications in 65-nm CMOS (2012, neutral): “terahertz radiation in [24], [25], first CMOS multi-pixel arrays”