Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator

By L. Herlogsson, Yong‐Young Noh, Ni Zhao, Xavier Crispin, Henning Sirringhaus, Magnus Berggren. 2008

149 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7e28f7f14320ba4faac45e3859fe03db8b8ce0a0

Citations in the corpus

• Electric double-layer transistors: a review of recent progress (2015, unknown): “18 Electrical characteristics of submicrometer channel-length self-aligned inkjet printing (SAP) OFETs having dielectric (left) and electrolytic (right) gate insulators, PMMA and P(VPA-AA), respectively. a Schematic cross sections and illustrations of the electric-field distribution inside the insul”