Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors
By G. Zoppi, I. Forbes, R. Miles, P. Dale, J. Scragg, L. Peter. 2009
292 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/7e232b22c6e8d751cb5cb79838334df28a7fd66d
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In Electrical and Electronic Engineering
- O. Gunawan
- David B. Mitzi
- Tayfun Gokmen
- Teodor K. Todorov
- Jiang Tang
- D. Barkhouse
- Martin A. Green
- S. Abermann
In Materials Chemistry
- O. Gunawan
- David B. Mitzi
- Tayfun Gokmen
- Teodor K. Todorov
- Jiang Tang
- D. Barkhouse
- Martin A. Green
- S. Abermann
Citations in the corpus
- Device characteristics of a 10.1% hydrazine‐processed Cu2ZnSn(Se,S)4 solar cell (2012, methodology): “To provide more information on the electrical defect characteristics in our CZTSSe cell, we performed capacitance spectroscopy in the frequency range of 100 Hz–1MHz, with temperature ranging from 340 to 120K (Figure 3), following the procedure described in Reference [23].”