Spin relaxation of conduction electrons in bulk III-V semiconductors
By P. H. Song, Ki Wook Kim. 2001
135 citations recorded by the source corpus.
The spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs, and InSb of both n and p type. The relative importance of each spin relaxation mechanism is compared, and diagrams showing the dominant mechanism are constructed as a function of the temperature and impurity concentration. Our approach is based upon theoretical calculations of the momentum relaxation rate, and allows one to understand the interplay between various factors affecting the spin relaxation over a broad range of temperature and impurity concentration.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/7e03e7a17720fe03e34c09c25e3846483f6ebcf1
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Spintronics: Fundamentals and applications (2004, unknown): “This crossover temperature appears to be quite insensitive to the electron density, being between 1 and 5 K in most investigated III-V semiconductors for donor densities greater than 1014 cm23 (Song and Kim, 2002).”
- Spin dynamics in semiconductors (2010, methodology): “This is consistent with the common belie f in the literature [3, 21, 22, 106, 108, 436].”