Semiconductor Devices for High-Speed Optoelectronics
By Giovanni Ghione. 2009
190 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/7dbd2e113e2207145e7a061dc8eef0d945a0749c
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- Xi Xiao
- Xiang Li
- Lei Wang
- Miaofeng Li
- Shaohua Yu
- Da-Wei Zhou
Citations in the corpus
- Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications (2018, background): “(2), which characterizes the velocity mismatch of the modulator; l is the traveling-wave electrode length of the modulator; ωm is the modulation angular frequency; c is the velocity of light in vacuum; nμ is the microwave refractive index and nopt is the optical refractive index [26].”