Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study

By W. Feng, Yugui Yao, Wenguang Zhu, Jinjian Zhou, W. Yao, Di Xiao. 2012

176 citations recorded by the source corpus.

Polarization-modulated resistive switching and fatigue behaviors of the Ag/La0.1Bi0.9FeO3/La0.7Sr0.3MnO3 capacitors have been investigated. The device resistance is found to show a V-shaped dependence on poling voltage, and the lowest resistance appears at the voltage corresponding to the coercive field of La0.1Bi0.9FeO3. Based on this relation, three distinct resistance states can be achieved by applying appropriate pulse trains, which manifests a potential application in high-density storage technology. The fatigue properties of the sample under repeated bipolar or unipolar pulses were further analyzed. Bipolar pulses enhance the rectifying characters of the current-voltage relation, whereas unipolar pulses produce a reverse effect. Based on impedance analysis, we propose the formation of leakage paths along conductive domain walls, and it is the domain reconstruction during repeated polarization flipping that results in the complex transport behavior observed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757987]

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7cbf2475783075702de8c8834169135a53c5f507

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Colloquium : Spintronics in graphene and other two-dimensional materials (2019, methodology): “Values extracted from ab initio calculations (Feng et al., 2012; Kormanyos et al., 2013; Zhu et al., 2011) are summarized in Table I. Notice that the splitting of the bands has opposite sign at each valley, as imposed by time-reversal symmetry.”