Sub-threshold Design for Ultra Low-Power Systems
By Alice Wang, Benton H. Calhoun, Anantha P. Chandrakasan. Series on Integrated Circuits and Systems, 2006
630 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Hardware and Architecture
View Paper: https://www.semanticscholar.org/paper/7c70e9ff6377120dbb3df60476033a1966c8990c
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In Electrical and Electronic Engineering
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Citations in the corpus
- A 300 nW, 15 ppm/$^{\circ}$C, 20 ppm/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs (2009, background): “I. INTRODUCTION O NE of the promising areas of research in microelectronicsis the development of ultra-low power LSIs that operate in the subthreshold region of MOSFETs, i.e., a region at which the gate-source voltage of MOSFETs is lower than the threshold voltage [1], [2].”
- Ultra-Low Power VLSI Circuit Design Demystified and Explained: A Tutorial (2012, methodology): “A historical survey of such predictions can be found in [21].”