Mechanism of enhancement of electromagnetic properties of MgB2 by nano-SiC doping
By Shixue Dou, O. Shcherbakova, W. Yeoh, Jung Ho Kim, S. Soltanian, Xiaolin Wang, C. Senatore, René-Louis Flukiger, M. Dhallé, O. Husnjak and 1 more. 2007
288 citations recorded by the source corpus.
A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size and nanoinclusions induced by C incorporation and low temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/7c689e7b0335341bacf6d215a97d790123754b59
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Two-band superconductor magnesium diboride (2008, background): “In nano-SiC doping, the C substitution is responsible for high Hc2 and defects, small grain size and nanoinclusions are responsible for the improvement in Jc(H) [220].”