Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

By A. Bryant, Shaoyong Yang, P. Mawby, D. Xiang, L. Ran, P. Tavner, Patrick R. Palmer. IEEE transactions on power electronics, 2011

208 citations recorded by the source corpus.

In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV/dt at turn-OFF is outlined. A theoretical closed-form expression for the dV/dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV/dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV/dt are discussed, including implementation of such a temperature measurement technique.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7c4cc54e2e032a3b982442d034325bbcd9d7ea08

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In Electrical and Electronic Engineering

1. Wuhua Li
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4. Truong-Duy Duong

Citations in the corpus

• Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules (2016, methodology): “The specific value can be defined as the knee voltage Vknee of turn-off voltage vce and the corresponding time instant is t2 [19].”