Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

By Bongki Lee, G. Mordi, Moon J. Kim, Y. Chabal, E. Vogel, Robert M. Wallace, Kyeongjae Cho, Luigi Pietro Maria Colombo, Jiyoung Kim. 2010

134 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7ba5d44ad66d6afccba6ea7a96cb1f712a93d6d3