Electric Field Effect on Magnetization and Magnetocrystalline Anisotropy at the Fe/MgO(001) Interface

By M. Niranjan, C. Duan, S. Jaswal, E. Tsymbal. 2010

270 citations recorded by the source corpus.

Density-functional calculations are performed to explore magnetoelectric effects originating from the influence of an external electric field on magnetic properties of the Fe/MgO(001) interface. It is shown that the effect on the interface magnetization and magnetocrystalline anisotropy can be substantially enhanced if the electric field is applied across a dielectric material with a large dielectric constant. In particular, we predict an enhancement of the interface magnetoelectric susceptibility by a factor of the dielectric constant of MgO over that of the free standing Fe (001) surface. We also predict a significant effect of electric field on the interface magnetocrystalline anisotropy due to the change in the relative occupancy of the 3d-orbitals of Fe atoms at the Fe/MgO interface. These results may be interesting for technological applications such as electrically controlled magnetic data storage.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/7ae1802b3e4dcdb206d369b9de42675a5b588689

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Juan G. Alzate
2. M. Chshiev
3. Kang L. Wang
4. Bernard Dieny
5. Jordan A. Katine

In Condensed Matter Physics

1. M. Chshiev
2. Juan G. Alzate
3. Bernard Dieny
4. Jordan A. Katine
5. Kang L. Wang

In Electronic, Optical and Magnetic Materials

1. Juan G. Alzate
2. M. Chshiev
3. Bernard Dieny
4. Kang L. Wang

Citations in the corpus

• Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, methodology): “…at FM=MgO interfaces and in MTJ, both experimentally (Shiota et al., 2009, 2012; Endo et al., 2010; Nozaki et al., 2010; Seki et al., 2011; Wang et al., 2012) and theoretically (Nakamura et al., 2010; Niranjan et al., 2010; Shimabukuro et al., 2010; Tsujikawa et al., 2011; Suzuki et al., 2013).”
• Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling (2015, background): “The VCMA effect can be explained in terms of the electricfield-induced change of occupancy of atomic orbitals at the interface, which, in conjunction with spin–orbit interaction, results in a change of anisotropy [34]–[36].”