Electrically active defects in n-type 4H-silicon carbide grown in a vertical hot-wall reactor

By Jie Zhang, L. Storasta, J. Bergman, N. T. Son, E. Janzén. 2003

172 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7ac4c615c8904d82c76412b69494b575187e3164