Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy
By G. Rutter, N. Guisinger, J. Crain, E. Jarvis, Mark D. Stiles, Tianbo Li, P. First, J. Stroscio. 2007
177 citations recorded by the source corpus.
Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the interface structure beneath single-layer graphene using scanning tunneling microscopy. Such imaging is possible because the graphene appears transparent at energies of $\ifmmode\pm\else\textpm\fi{}1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ above or below the Fermi energy $({E}_{F})$. Our analysis of calculations based on density-functional theory shows how this transparency arises from the electronic structure of a graphene layer on a SiC substrate.
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/7a01eecb7fc967b6a913e6c84545fbbe7cb8b033
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In Materials Chemistry
Citations in the corpus
- Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene (2011, background): “for the buffer layer and monolayer graphene [24].”
- Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “5 Å [92] distance from the Si-terminated SiC surface which is less than the graphite inter-plane spacing of 3.”
- Production and processing of graphene and related materials (2020, unknown): “5 eV, as shown by Scanning tunnelling Spectroscopy (STS) and photoemission spectroscopy ( See section IX for an introduction to the technique) [545-547].”