Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer
By J. Derluyn, S. Boeykens, K. Cheng, R. Vandersmissen, J. Das, W. Ruythooren, S. Degroote, M. Leys, M. Germain, G. Borghs. 2005
202 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/79f71e83fda5f0bd9f9ea10f57635f98b26cd219
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Citations in the corpus
- CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon (2012, background): “The improved breakdown behavior is believed to be related to the higher quality semiconductor/dielectric interface, as is known for in situ Si3N4 [1].”