Tuning the electronic structure of graphene by ion irradiation
By L. Tapasztó, G. Dobrik, P. Nemes-Incze, G. Vértesy, P. Lambin, László Péter Biró. 2008
204 citations recorded by the source corpus.
Mechanically exfoliated graphene layers deposited on ${\text{SiO}}_{2}$ substrate were irradiated with ${\text{Ar}}^{+}$ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The irradiated samples were investigated by scanning tunneling microscopy and spectroscopy measurements, which reveal that defect sites, besides acting as scattering centers for electrons through local modification of the on-site potential, also induce disorder in the hopping amplitudes. The most important consequence of the induced disorder is the substantial reduction in the Fermi velocity, revealed by bias-dependent imaging of electron-density oscillations observed near defect sites.
Subfields: Computational Mechanics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/796c19aefa5f92eadf11aa017304236fa0bacf2b
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Citations in the corpus
- Structural defects in graphene. (2011, methodology): “Another physical method which has been used for defect production in graphene is ion irradiation.(18,88) 91 It can be used to selectively produce certain defects (typically vacancies)(92) or to pattern and cut graphene with a precision down to 10 nm utilizing a focused ion beam (FIB).”
- A Review on Lattice Defects in Graphene: Types, Generation, Effects and Regulation (2017, methodology): “In addition, the scanning electron microscope (SEM) [29,30] and atomic force microscope (AFM) are widely used experimental devices for characterizing nano-materials.”