Microwave photovoltage and photoresistance effects in ferromagnetic microstrips

By N. Mecking, Y. Gui, C.-M. Hu. 2007

147 citations recorded by the source corpus.

We investigate the dc electric response induced by ferromagnetic resonance in ferromagnetic Permalloy $({\mathrm{Ni}}_{80}{\mathrm{Fe}}_{20})$ microstrips. The resulting magnetization precession alters the angle of the magnetization with respect to both dc and rf current. Consequently the time averaged anisotropic magnetoresistance (AMR) changes (photoresistance). At the same time the time-dependent AMR oscillation rectifies a part of the rf current and induces a dc voltage (photovoltage). A phenomenological approach to magnetoresistance is used to describe the distinct characteristics of the photoresistance and photovoltage with a consistent formalism, which is found in excellent agreement with experiments performed on in-plane magnetized ferromagnetic microstrips. Application of the microwave photovoltage effect for rf magnetic field sensing is discussed.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/795dc45ef81215ed50d7b8bffad975973e79584d

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In Atomic and Molecular Physics, and Optics

  1. Can-Ming Hu
  2. M. Harder
  3. Y. Gui
  4. Axel Hoffmann

In Electrical and Electronic Engineering

  1. M. Harder
  2. Can-Ming Hu
  3. Axel Hoffmann
  4. Y. Gui

In Electronic, Optical and Magnetic Materials

  1. M. Harder
  2. Can-Ming Hu
  3. Axel Hoffmann
  4. Y. Gui

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