Working principle of carrier selective poly-Si/c-Si junctions: Is tunnelling the whole story?

By Robby Peibst, U. Römer, Y. Larionova, M. Rienäcker, A. Merkle, N. Folchert, Sina Reiter, M. Turcu, B. Min, J. Krügener and 4 more. 2016

211 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/791407be9f52a0621bb136e81e798c60be06a168

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. L. Black
2. W. Kessels

In Electrical and Electronic Engineering

1. B. Macco
2. Jimmy Melskens
3. L. Black
4. S. Smit
5. W. Kessels
6. B. V. D. Loo

Citations in the corpus

• Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, background): “been argued that conduction via pinholes in the oxide could be responsible for the carrier transport in the oxide [61], [62] or that it should be seen as a combination of tunneling and pinholeassisted transport [63].”