Electronic decoupling of an epitaxial graphene monolayer by gold intercalation
By I. Gierz, Takayuki Suzuki, D. S. Lee, B. Krauss, C. Riedl, U. Starke, H. Hǒchst, Jurgen Hubert Smet, C. Ast, K. Kern. 2010
202 citations recorded by the source corpus.
The application of graphene in electronic devices requires large-scale epitaxial growth. The presence of the substrate, however, usually reduces the charge-carrier mobility considerably. We show that it is possible to decouple the partially sp(3)-hybridized first graphitic layer formed on the Si-terminated face of silicon carbide from the substrate by gold intercalation, leading to a completely sp(2)-hybridized graphene layer with improved electronic properties.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/78f2133b1e4cde5c26add46b9eba47f48fb97821
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In Electrical and Electronic Engineering
- Francesco Bonaccorso
- Andrea C. Ferrari
- C. Backes
- Xiaodong Zhuang
- A. Ciesielski
- Paolo Samorì
- A. Castellanos-Gómez
- Xinliang Feng
In Materials Chemistry
- Kostas Kostarelos
- M. Prato
- Francesco Bonaccorso
- A. Bianco
- A. Castellanos-Gómez
- Jonathan N. Coleman
- Andrea C. Ferrari
- Paolo Samorì
Citations in the corpus
- Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “However, hydrogen, sodium [96,112,113], oxygen [114], lithium [115], Si [116], gold [117], fluorine [118], and”
- Production and processing of graphene and related materials (2020, background): “For Au two phases were observed [693]: a highly n-type doped one with the Dirac point located ~0.”