Field-induced resistive switching in metal-oxide interfaces

By S. Tsui, A. Baikalov, J. Cmaidalka, Y. Sun, Y. Wang, Y. Xue, C. Chu, L. Chen, A. B. D. O. Physics, Tcsam and 7 more. 2004

242 citations recorded by the source corpus.

We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I–V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/78dc0fca39852e4394cd22997f6f7e79f5120269