Evidence for helical edge modes in inverted InAs/GaSb quantum wells.

By Ivan Knez, R. Du, G. Sullivan. Physical Review Letters, 2011

683 citations recorded by the source corpus.

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. An electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys. Rev. Lett. 100, 236601 (2008)]. Edge modes persist in spite of sizable bulk conduction and show only a weak magnetic field dependence-a direct consequence of a gap opening away from the zone center.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/78976e4662f63ab734ce1fc3f659f204bc5e48dc

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In Atomic and Molecular Physics, and Optics

1. Hsin Lin
2. Arun Bansil
3. Tanmoy Das
4. H. Weng
5. X. Dai
6. Z. Fang
7. H. Ding
8. T. Qian

In Electrical and Electronic Engineering

1. A. Manchon
2. Xuejie Huang

Citations in the corpus

• New perspectives for Rashba spin-orbit coupling. (2015, background): “They were later also reported in InAs/GaSb quantum wells [89].”
• Evidence for Topological Edge States in a Large Energy Gap near the Step Edges on the Surface of ZrTe 5 (2016, background): “Although considerable theoretical efforts have predicted many 2D TI candidates in recent years [3–17], only a few systems, such as the quantum wells of HgTe=CdTe and InAs=GaSb, have been demonstrated experimentally to display the QSH effect [18,19].”
• Colloquium : Topological band theory (2016, background): “Despite the progress made in synthesizing 3D TIs, the materials realization of 2D TIs or quantum spin Hall (QSH) insulators is still limited to the HgTe/CdTe (König et al. 2007)and InAs/GaSb/AlSb (Knez, Du, and Sullivan 2011) quantum well systems with small band gaps of ~4-10 meV.”