Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility

By Chao Xin, Jiaxin Zheng, Yantao Su, Shuankui Li, Bingkai Zhang, Yancong Feng, F. Pan. 2016

138 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7864d77755ec2b9393242d59ab94cdb7425db373